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TYPICAL PERFORMANCE CURVES (R)
APT75GN120JDQ3 1200V
APT75GN120JDQ3
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
E G C
E
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
* 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Intergrated Gate Resistor: Low EMI, High Reliability
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT75GN120JDQ3 UNIT Volts
1200 30 124 57 225 225A @ 1200V 379 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA) Gate Threshold Voltage (VCE = VGE, I C = 3mA, Tj = 25C) MIN TYP MAX Units
1200 5.0 1.4
2 2
5.8 1.7 2.0
6.5 2.1 200 TBD 600
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES RG(int)
Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7618
Rev C
10
10-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT75GN120JDQ3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 75A TJ = 150C, R G = 4.3 7, VGE = 15V, L = 100H,VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 75A VGE = 15V MIN TYP MAX UNIT pF V nC
4800 275 210 9.0 425 30 245 225 60 41 620 110 8045 9620 7640 60 41 725 200 8620 13000 11400 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
RG = 1.0 7 TJ = +25C
Turn-on Switching Energy (Diode)
6
J
Inductive Switching (125C) VCC = 800V VGE = 15V I C = 75A
Turn-on Switching Energy (Diode)
66
TJ = +125C
RG = 1.0 7
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.33 .56 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
10-2005 Rev C
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7618
TYPICAL PERFORMANCE CURVES
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
V
GE
= 15V
160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 12V
APT75GN120JDQ3
13 &15V
TJ = -55C TJ = 25C TJ = 125C
11V
10V
9V 8V 7V
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 75A C T = 25C
J
0 2 4 6 8 10 12 14 16 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V VCE = 960V
TJ = -55C TJ = 25C TJ = 125C
80 60 40 20 0 0
8 6 4 2 0 0 100
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
200 300 400 GATE CHARGE (nC)
500
FIGURE 4, Gate Charge 3.5 3.0 2.5 2.0 1.5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
IC = 150A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 150A IC = 75A
IC = 75A
IC = 37.5A
IC = 37.5A
1.0 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15
0
8
0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
IC, DC COLLECTOR CURRENT(A)
VGS(TH), THRESHOLD VOLTAGE
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature
180 160 140 120 100 10-2005 050-7618 Rev C 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
(NORMALIZED)
70 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 60 50 40 30 20 10 0
VCE = 800V TJ = 25C, or =125C RG = 1.0 L = 100H
800 700 600 500 400 300 200
V = 800V 100 RCE= 1.0 G VGE =15V,TJ=125C
APT75GN120JDQ3
VGE = 15V
VGE =15V,TJ=25C
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
0
L = 100H
180 160 140
RG = 1.0, L = 100H, VCE = 800V
300 250 tf, FALL TIME (ns) 200 150 100 50 0
RG = 1.0, L = 100H, VCE = 800V
tr, RISE TIME (ns)
120 100 80 60 40 20
TJ = 25 or 125C,VGE = 15V
TJ = 125C, VGE = 15V
TJ = 25C, VGE = 15V
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
0
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
50000 EON2, TURN ON ENERGY LOSS (J)
EOFF, TURN OFF ENERGY LOSS (J)
V = 800V CE V = +15V GE R = 1.0
G
25000
= 800V V CE = +15V V GE R = 1.0
G
40000
TJ = 125C
20000
TJ = 125C
30000
15000
20000
10000
TJ = 25C
10000
TJ = 25C
5000
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
0
160 130 100 70 40 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
0
100000 SWITCHING ENERGY LOSSES (J)
J
SWITCHING ENERGY LOSSES (J)
= 800V V CE = +15V V GE T = 125C
50000
Eon2,150A
= 800V V CE = +15V V GE R = 1.0
G
Eon2,150A
80000
40000
60000
30000
40000
Eoff,150A
20000
10-2005
Eoff,150A Eon2,75A Eoff,75A Eoff,37.5A Eon2,37.5A
20000
Rev C
Eon2,75A
Eon2,37.5A
Eoff,75A Eoff,37.5A
10000
050-7618
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
TYPICAL PERFORMANCE CURVES
6,000 Cies IC, COLLECTOR CURRENT (A)
250
APT75GN120JDQ3
200
C, CAPACITANCE ( F)
P
1,000 500 Coes Cres
150
100
50
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
100
0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.35 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3 SINGLE PULSE
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
0.7
PDM
t1 t2
0.1 0.05 10-5 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
40 FMAX, OPERATING FREQUENCY (kHz)
Junction temp. (C)
RC MODEL
0.0820
0.00977
10
Power (watts)
0.214
0.227
5
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = 800V CE R = 1.0
G
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
0.0335 Case temperature. (C)
6.33
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80 90 100 110 120 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
050-7618
Rev C
10-2005
APT75GN120JDQ3
APT60DQ120
10% td(on)
Gate Voltage TJ = 125C
V CC
IC
V CE
tr Collector Current 5% 90% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90% Gate Voltage td(off) TJ = 125C
Collector Voltage 90% tf 10% Collector Current
0
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7618
Rev C
10-2005
TYPICAL PERFORMANCE CURVES
APT75GN120JDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 75A Forward Voltage IF = 150A IF = 75A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT75GN120JDQ3 UNIT Amps
60 73 540
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.8 3.48 2.17
MIN TYP MAXUNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.60 ZJC, THERMAL IMPEDANCE (C/W) 0.50 0.40 0.30 0.20 0.10 0 D = 0.9
60 265 560 5 350 2890 13 150 4720 40 -
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 60A, diF/dt = -1000A/s VR = 800V, TC = 125C
-
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Junction temp. (C) RC MODEL
0.148
0.006
0.238
0.0910
Case temperature. (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7618
0.174
0.524
Rev C
Power (watts)
10-2005
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = 25C TJ = -55C
400 350 300 250 200 150 100 50 120A
APT75GN120JDQ3
T = 125C J V = 800V
R
60A 30A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 7000 Qrr, REVERSE RECOVERY CHARGE (nC) 6000 5000 4000 3000 2000 1000 0 30A
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 50 45 40 35 30 25 20 15 10 5 0
T = 125C J V = 800V
R
0
120A
120A
60A
60A
30A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 Qrr 0.2 0.0 trr IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 90 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
trr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature 350 CJ, JUNCTION CAPACITANCE (pF) 300 250 200 150 100 50 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-7618
Rev C
10-2005
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT75GN120JDQ3
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
10-2005 050-7618 Rev C
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
Dimensions in Millimeters and (Inches)
,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A Rights Reserved. ll 5,262,336 6

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